光子晶体光纤温度压力传感器

提出了一种在高温环境下同时测量温度和气压的光子晶体光纤温度压力传感器.在普通单模光纤和光子晶体光纤之间熔接一段空心光纤构成干涉结构.空心光纤段构成非本征法布里-珀罗干涉仪,利用光子晶体光纤的微孔与外界相通,通过气体折射率变化来测量环境中的气压变化;光子晶体光纤段构成本征法布里-珀罗干涉仪,利用热膨胀效应和热光效应来测量环境中的温度.传感器的解调通过自制的白光干涉解调仪实现,实验通过测量腔长得到被测环境的温度和气压.在不同温度和气压环境下,对腔长分别为306μm和1535μm的温度压力光纤传感器进行连续测量.实验结果表明,传感器能够在28~800℃的温度下和0~10 MPa的气压下稳定工作,测量范围内温度灵敏度可达17.4 nm/℃,压力灵敏度随温度增加而降低,在28℃时可达1460.5 nm/MPa.     

The Jordan property of Cremona groups and essential dimension

We use a recent advance in birational geometry to prove new lower bounds on the essential dimension of some finite groups.     

Application of ion-imprinted polymer synthesized by precipitation polymerization as an efficient and selective sorbent for separation and pre-concentration of chromium ions from some real samples

In this study, a new Cr(III)-imprinted polymer (Cr(III)-IIP) is prepared from CrCl₃·6H₂O, methacrylic acid functional monomer, ethyleneglycoldimethacrylate cross-linking agent, 2,2?-azobisisobutyronitrile radical initiator and 2,2-(azanediylbis (ethane-2,1-diyl))bis(isoindoline-1,3-dione) ligand. To obtain the maximum adsorption capacity, the optimum condition was studied through pH, type and concentration of eluent, IIP weight, sample volume as well as the adsorption and desorption times. The Cr(III) ion content was determined via flame atomic absorption spectrometer. In optimum conditions, the adsorption capacity of the IIP for Cr(III) was obtained to be 74.65 mg g^?1, using 50 mg of IIP and the initial pH solution of 3.0. Both the adsorption and desorption times for quantitative analyses of Cr(III) ions were 15 and 5 min; respectively. After elution of the adsorbed ions by 3 mL of 4 mol L^?1 HNO₃ aqueous solution, the established IIP-based SPE procedure provides a reasonable pre-concentration factor of 100. The IIP-based pre-concentration method provides a low detection limit of 1.7 µg L^?1 with good repeatability (RSD?=?3.22%). Reusability studies confirmed that synthesis IIP is reusable and recoverable up to six cycles. According to the selectivity experiments, it was concluded that the prepared sorbent possesses more affinity toward Cr(III) ions than other ions such as Al³⁺, Pb²⁺, Cu²⁺, Mn²⁺, Fe²⁺, Zn²⁺, and Ni²⁺ ions. To evaluate the potential applicability of the proposed separation method, the pre-concentration and determination of trace amounts of Cr(III) were performed successfully in food samples with complex matrices, a bestial sample (i.e. cow liver) and an herbal product (i.e., broccoli) as real samples.     

On the output function in a Ginsburg’s machine

We give the form of the output function in Ginsburg’s machine in which the input and output dictionaries are abelian groups and the transition function is of a special form.     

Rotating Detonation Combustor Research at the University of Cincinnati

Rotating detonation combustors (RDC) are at the forefront of pressure gain combustion (PGC) research. The simplicity in design and the ease of assembly makes it a promising technology that could be integrated into existing combustor architectures. This is, however, coupled with the considerable complexities of the detonation-based flow field, and the associated modes and coupling mechanisms. The current paper is an overview of the research done at the University of Cincinnati to address some of the challenges and questions pertaining to the physics of RDC operation. Issues such as combustor geometry, injection schemes and mixing, varied reactants behavior and modes of RDC operation are discussed. The effects of pressurization of the combustor, along with other detonation enhancement strategies are also deliberated upon. When appropriate, parallels are drawn to the phenomena of high frequency combustion instabilities to address the similarities in observations between the two fields.     

Integral Group Rings With All Central Units Trivial: Solvable Groups

The object of this paper is to examine finite solvable groups whose integral group rings have only trivial central units.     

A conditional symmetric memristive system with amplitude and frequency control

By introducing a memristor into a chaotic system with a single non-quadratic term and substituting an absolute value function for conditional symmetry, a unique chaotic system is constructed. Firstly, the system shares a special structure of symmetry and conditional symmetry. Secondly, the amplitude and frequency of the system variables can be rescaled by the applied memristor. Interestingly it gives a new case of attractor control namely partial amplitude control and global frequency control. At last, as a new regime of extreme multistability, the memristive system shows relatively simple bifurcation according to the initial condition. This new class of chaotic system has never been reported to the best of our knowledge.

     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

碳纳米管的可控长度拾取及导电性分析

拾取指定长度的半导体性碳纳米管对大规模制造碳纳米管场效应管具有重要意义.本文提出了一种利用原子力显微镜探针和钨针对碳纳米管进行可控长度拾取的方法并进行了碳纳米管导电性分析.在扫描电子显微镜下搭建微纳操作系统,针对切割操作过程中原子力显微镜探针、钨针和碳纳米管的接触情况进行了力学建模和拾取长度误差分析.建立了单根金属性碳纳米管、单根半导体性碳纳米管及碳纳米管束与钨针接触的电路模型,推导了接入不同性质碳纳米管后电路的电流电压特性方程.使用原子力显微镜探针对碳纳米管的空间位姿进行调整,控制钨针对碳纳米管上目标位置进行通电切割,同时获取切割电路中的电流电压数据.实验结果表明,本文提出的方法能够有效控制所拾取碳纳米管的长度,增加碳纳米管与原子力显微镜探针的水平接触长度能够减小碳纳米管形变导致的拾取长度误差,建立的电流电压特性方程能够用于分析碳纳米管的导电性.